IRF7526D1 fetky mosfet & schottky diode tm description l co-packaged hexfet power mosfet and schottky diode l p-channel hexfet l low v f schottky rectifier l generation 5 technology l micro8 tm footprint v dss = -30v r ds(on) = 0.20 w schottky vf = 0.39v micro8 tm notes: ? repetitive rating C pulse width limited by max. junction temperature (see fig. 9) ? i sd -1.2a, di/dt 160a/s, v dd v (br)dss , t j 150c ? pulse width 300s C duty cycle 2% ? when mounted on 1 inch square copper board to approximate typical multi-layer pcb thermal resistance 5/7/99 top view 8 1 2 3 4 5 6 7 a a s g d d k k www.irf.com 1 absolute maximum ratings parameter maximum units r q ja junction-to-ambient ? 100 c/w thermal resistance ratings parameter maximum units i d @ t a = 25c -2.0 i d @ t a = 70c -1.6 i dm pulsed drain current -16 p d @t a = 25c 1.25 p d @t a = 70c 0.8 linear derating factor 10 mw/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c continuous drain current, v gs @ -4.5v power dissipation a w the fetky tm family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, pda, etc. the new micro8 tm package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 tm an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 tm will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. pd -91649c
IRF7526D1 2 www.irf.com mosfet electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 CCC CCC v v gs = 0v, i d = -250a CCC 0.17 0.20 v gs = -10v, i d = -1.2a ? CCC 0.30 0.40 v gs = -4.5v, i d = -0.60a ? v gs(th) gate threshold voltage -1.0 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 0.94 CCC CCC s v ds = -10v, i d = -0.60a CCC CCC -1.0 v ds = -24v, v gs = 0v CCC CCC -25 v ds = -24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -20v gate-to-source reverse leakage CCC CCC 100 v gs = 20v q g total gate charge CCC 7.5 11 i d = -1.2a q gs gate-to-source charge CCC 1.3 1.9 nc v ds = -24v q gd gate-to-drain ("miller") charge CCC 2.5 3.7 v gs = -10v, see fig. 6 ? t d(on) turn-on delay time CCC 9.7 CCC v dd = -15v t r rise time CCC 12 CCC i d = -1.2a t d(off) turn-off delay time CCC 19 CCC r g = 6.2 w t f fall time CCC 9.3 CCC r d = 12 w, ? c iss input capacitance CCC 180 CCC v gs = 0v c oss output capacitance CCC 87 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 42 CCC ? = 1.0mhz, see fig. 5 r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current i gss w a na ns parameter min. typ. max. units conditions i s continuous source current( body diode) CCC CCC -1.25 i sm pulsed source current (body diode) CCC CCC -9.6 v sd body diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.2a, v gs = 0v t rr reverse recovery time (body diode) CCC 30 45 ns t j = 25c, i f = -1.2a q rr reverse recovery charge CCC 37 55 nc di/dt = 100a/s ? a mosfet source-drain ratings and characteristics parameter max. units conditions i f(av) max. average forward current 1.9 50% duty cycle. rectangular wave, t a = 25c 1.3 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.06 v r = 30v t j = 25c 16 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/s rated v r schottky diode electrical specifications v ma ( hexfet is the reg. tm for international rectifier power mosfet's ) see fig. 14
IRF7526D1 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 0.1 1 10 d ds 20s pulse w idth t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 0.1 1 10 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20s pulse w idth t = 150c j 0.1 1 10 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 t = 25c t = 150c j j gs d a -i , drain-to-source c urrent (a) -v , g ate-to-source voltage (v) v = -1 0 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-s ource o n resistance ds(on) (n orm alized) a v = -10v gs i = -1.2a d power mosfet characteristics
IRF7526D1 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 4 8 12 16 20 024681012 g gs a -v , g ate-to-source voltage (v) q , total g ate char g e ( nc ) v = -24v v = -15v ds ds i = -1.2a d for test circuit see figure 9 0.1 1 10 100 1 10 100 ope ration in this area limite d by r ds(on) t = 25c t = 150c sin g le p u ls e a -i , drain current (a) -v , drain-to-source volta g e ( v ) ds d a j 100s 1ms 10ms 0 100 200 300 400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v, f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) power mosfet characteristics
IRF7526D1 www.irf.com 5 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical on-resistance vs. drain current r ds (on) , drain-to-source on resistance ( w ) fig 11. typical on-resistance vs. gate voltage r ds (on) , drain-to-source on resistance ( w ) 0.0 0.5 1.0 1.5 01234 a vgs = -10v vgs = -4.5v d -i , drain current (a) 0.10 0.20 0.30 0.40 0.50 0.60 3 6 9 12 15 a i = -2.0a gs -v , g ate-to-source voltage (v) power mosfet characteristics
IRF7526D1 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage reverse current - i r (ma) 0.0001 0.001 0.01 0.1 1 10 100 0 5 10 15 20 25 30 r 100c 75c 50c 25c reverse volta g e - v ( v ) 125c a t = 150c j fig. 12 -typical forward voltage drop characteristics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j fig.14 - maximum allowable ambient temp. vs. forward current 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a avera g e forw ard current - i ( a ) allow able am bient temperature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 80% rated r = 1 00c /w square wave thja r forward voltage drop - v f (v)
IRF7526D1 www.irf.com 7 micro8 tm package details part marking inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x q notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 co ntrolling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 q 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g 1 s2 g 2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x
IRF7526D1 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter. micro8 tm tape & reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 221 8371 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice . 5/99
|
